Silicon phosphide (SiP) is a layered semiconductor crystallizing in C2/m (2D anisotropic) structure. It has been shown to undergo indirect (bulk) to direct (monolayer) gap transition from 1.69 (bulk) to 2.5 eV (monolayer). The atoms are arranged to form 1D-like features much similar to 公司客户可以提供晶体免费机械剥离和转移技术。