样品名称 |
进口二硫化锗晶体GeS2
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性质 |
半导体 |
带隙 |
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参数 |
尺寸:~1 cm, 纯度≧99.9995% |
应用 |
半导体电子器件,传感器-探测器,光学器件等研究 |
其他性质 |
详情请发邮件至:mknano@126.com.
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晶体照片:

Product Description:
Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to ensure high crystallinity and vdW nature. The crystals large is size and mea
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