| 样品名称 |
进口二硫化锗晶体GeS2
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| 性质 |
半导体 |
| 带隙 |
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| 参数 |
尺寸：～1 cm, 纯度≧99.9995% |
| 应用 |
半导体电子器件，传感器-探测器，光学器件等研究 |
| 其他性质 |
详情请发邮件至：mknano@126.com.
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晶体照片：
Product Description：
Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to ensure high crystallinity and vdW nature. The crystals large is size and mea
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