高品质石墨烯类产品>SiO2/Si衬底单层石墨烯薄膜 -graphenea
 
SiO2/Si衬底单层石墨烯薄膜-Graphenea
 
货号: 102204 规格: 见说明 价格: 询价
CAS号: 7440-44-0
编号: MK2204
包装: 标准包装
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衬底信息和样品信息:

Monolayer Graphene film on SiO/Si (10 mm x 10 mm) - Processed in Clean Room Class 1000

Monolayer Graphene produced by CVD on copper catalyst and transferred to a SiO2/Si substrate using wet transfer process. 

This product is ideal for R&D departments and universities.

GRAPHENE FILM

  • · Transparency: > 97 %
  • · Coverage: > 95%
  • · Thickness (theoretical): 0.345 nm
  • · FET Electron Mobility on Al2O3: 2000 cm2/Vs
  • · Hall Electron Mobility on SiO2/Si: 2000-3500 cm2/Vs
  • · Sheet Resistance: 450±40 Ohms/sq (1cm x1cm)
  • ·Grain size: Up to 10 μm

SUBSTRATE SIO2/SI

  • · Dry Oxide Thickness: 300 nm (+/-5%)
  • · Type/Dopant: P/Bor
  • · Orientation: <100>
  • · Resistivity: <0.005 ohm.cm
  • · Thickness: 525 +/- 20 μm
  • · Front surface: Single Side Polished
  • · Back Surface: Etched
  • · Particles: <10@0.3 μm

QUALITY CONTROL

All our samples are subjected to a rigorous QC in order to ensure a high quality and reproducibility of the graphene.

  • · Raman Spectroscopy: I(G)/I(2D)<0.7; I(D)/I(G)<0.05
  • · Optical Microscopy inspection of each individual sample to ensure good transfer quality and purity

If your application requires more specific quality control (AFM, SEM...) , please do not hesitate to  

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