高品质石墨烯类产品>SiO2/Si衬底双层石墨烯薄膜-Graphenea
 
SiO2/Si衬底双层石墨烯薄膜-Graphenea
 
货号: 102205 规格: 见包装 价格: 询价
CAS号: 7440-44-0
编号: MK2205
包装: 标准包装
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衬底和样品信息:

Bilayer Graphene on SiO/Si 10 mm x 10 mm (non AB Bernal stacking) - Processed in Clean Room Class 1000

The bilayer graphene product consists of two CVD layers produced by multiple transfer on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.

GRAPHENE FILM

  • · Transparency: >94 %
  • · Color: Transparent
  • · Coverage: >95%
  • · Number of graphene layers: 2
  • · Thickness (theoretical): 0.69 nm
  • · Sheet resistance: 190±30 Ohms/sq (1cm x 1cm)
  • · Grain size: Up to 10 μm

SUBSTRATE SIO2/SI 

  • · Dry Oxide Thickness: 300 nm (+/-5%)
  • · Type/Dopant: P/Bor
  • · Orientation: <100>
  • · Resistivity: <0.005 Ohm·cm
  • · Thickness: 525 +/- 20 μm
  • · Front surface: Single Side Polished
  • · Back Surface: Etched
  • · Particles: <10@0.3 μm

APPLICATIONS

Our Graphene Oxide is subjected to a rigorous QC in order to ensure a high quality and reproducibility.

  • · Transparent conductors in OLEDs, LEDs, solar cells, etc...
  • · Graphene transistors and electronic applications

If your application requires more specific quality control, please do not hesitate to .

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