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DESCRIPTION QUESTIONS AND ANSWERS GFET-S20 (Die size 10 mm x 10 mm) - Processed in Clean Room Class 1000 The GFET-S20 chip from Graphenea provides 36 graphene devices distributed in four quadrants with the devices in the centre of the chip and the probe pads located near the periphery of the chip. All devices are of a 2-probe device geometry. The devices are arranged in GFET-S20 to allow the application of a liquid drop on top of the graphene devices without covering the pads to either conduct a measurement in a liquid environment or to functionalize the devices using a liquid medium. TYPICAL SPECIFICATIONS - · Growth method: CVD synthesis
- · Chip dimensions: 10 mm x 10 mm
- · Chip thickness: 675 μm
- · Number of GFETs per chip: 36
- · Gate oxide thickness: 90 nm
- · Gate oxide material: SiO2
- · Resistivity of substrate: 1-10 Ω.cm
- · Metallization: Nickel/Aluminium 140 nm
- · Graphene field-effect mobility: >1000 cm2/V.s
- · Residual charge carrier density: <2 x 1012 cm-2
- · Dirac point: 10-40 V
- · Minimum working devices: >75 %
ABSOLUTE MAXIMUM RATINGS
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