高品质石墨烯类产品>石墨烯晶体管探测器-GFET-S20
 
石墨烯晶体管探测器-GFET-S20
 
货号: 102281 规格: 10*10mm 价格: 询价
CAS号: 7440-44-0
编号: MK2281
包装: 原包装进口
产品咨询     查看大图    
 

器件图片:



器件示意图:


SEM:




DESCRIPTION QUESTIONS AND ANSWERS

GFET-S20 (Die size 10 mm x 10 mm) - Processed in Clean Room Class 1000

The GFET-S20 chip from Graphenea provides 36 graphene devices distributed in four quadrants with the devices in the centre of the chip and the probe pads located near the periphery of the chip. All devices are of a 2-probe device geometry.

The devices are arranged in GFET-S20 to allow the application of a liquid drop on top of the graphene devices without covering the pads to either conduct a measurement in a liquid environment or to functionalize the devices using a liquid medium.

TYPICAL SPECIFICATIONS

  • · Growth method: CVD synthesis
  • · Chip dimensions: 10 mm x 10 mm
  • · Chip thickness: 675 μm
  • · Number of GFETs per chip:  36
  • · Gate oxide thickness: 90 nm
  • · Gate oxide material: SiO2
  • · Resistivity of substrate: 1-10 Ω.cm
  • · Metallization: Nickel/Aluminium 140 nm
  • · Graphene field-effect mobility: >1000 cm2/V.s
  • · Residual charge carrier density: <2 x 1012 cm-2
  • · Dirac point: 10-40 V


  • · Minimum working devices: >75 %


ABSOLUTE MAXIMUM RATINGS

    • · Maximum gate-source voltage: ± 50 V
    • · Maximum temperature rating: 150 °C
    • · Maximum drain-source current density 107A.cm-2


关于大发888网页版手机版登陆   新闻中心   更多信息   合作企业
关于大发888网页版手机版登陆
大发888网页版手机版登陆愿景
大发888网页版手机版登陆石墨烯
应用领域
  大发888网页版手机版登陆新闻
产品新闻
行业动态
  法律申明
诚聘英才
 
版权所有 大发888网页版手机版登陆

服务时间:周一至周日 08:30 — 20:00  全国订购及服务热线:025-66171690
联系地址:南京市江宁区科学园芝兰路18号 南京模型公司